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The PDTA124ET-QR is a PNP Resistor-Equipped Transistor (RET) manufactured by Nexperia USA Inc. It integrates bias resistors into a small SOT23 surface-mounted device package. The component features a collector-emitter voltage of -50 V and an output current capability of -100 mA. Internal resistor R1 has a typical value of 22 kΩ, with a ratio to R2 of 1. The device operates within an ambient temperature range of -65 °C to +150 °C and supports a junction temperature up to 150 °C. Total power dissipation is rated at 250 mW. It meets AEC-Q101 qualification standards for automotive applications.
Verify the specific suffix 'QR' against the official Nexperia datasheet to confirm reel packaging specifications and ensure compatibility with automated assembly processes. Confirm that the ordering code matches the required marking codes and manufacturing site identifiers before finalizing procurement orders.
Select this component when a compact PNP transistor solution with integrated biasing is required for space-constrained designs. Ensure the -50 V collector-emitter voltage rating aligns with the target circuit's maximum operating conditions. Verify that the 22 kΩ internal resistance values meet the specific drive requirements for the intended load or logic interface.
This part belongs to the PDTA124ET-Q family of PNP resistor-equipped transistors. It serves as the PNP complement to the PDTC124ET-Q NPN variant. Both devices share similar electrical characteristics and are designed to replace discrete resistor-transistor networks in digital switching applications.
The PDTC124ET-Q is the NPN complement within the same product family. Designers requiring an NPN configuration should consider this alternative while maintaining identical package dimensions and integration benefits.