PDTA124ET-QVL

Overview

The PDTA124ET-Q is a PNP Resistor-Equipped Transistor (RET) manufactured by Nexperia, housed in an SOT23 surface-mount package. It integrates bias resistors R1 and R2, both nominally 22 kΩ, with a ratio of 1. The device supports a collector-emitter voltage (VCEO) of -50 V and a continuous output current (IO) of -100 mA. Total power dissipation is rated at 250 mW at 25 °C ambient temperature, derating linearly to zero at 150 °C junction temperature. The component operates within an ambient temperature range of -65 °C to +150 °C and is qualified according to the AEC-Q101 standard for automotive applications.

Feature Summary

• Integrates built-in bias resistors to simplify circuit design and reduce component count.
• Qualified according to AEC-Q101 standards for use in automotive applications.
• Provides 100 mA output current capability in a compact SOT23 plastic package.

Applications

• Digital applications in automotive and industrial segments
• Cost-saving alternative for BC847 series in digital applications
• Controlling IC inputs
• Switching loads

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details such as reel size or tape width. Confirm that the requested variant matches the required AEC-Q101 qualification status if automotive compliance is mandatory for the design. Ensure the SOT23 footprint dimensions align with the provided soldering guidelines during PCB layout.

Selection Notes

Select this component when a PNP transistor with integrated base biasing is required to minimize board space and assembly costs. The 22 kΩ input resistor value determines the drive current requirements from the controlling logic source. Verify that the maximum input voltage limits are respected to prevent damage to the internal emitter-base junction during operation.

Part Context

This part belongs to the PDTAxxxE family of PNP resistor-equipped transistors from Nexperia. It serves as the PNP complement to the PDTC124ET-Q NPN RET. The device is designed to replace discrete resistor-transistor networks, offering a standardized solution for digital switching tasks in consumer electronics and automotive systems.

Replacement Considerations

The NHDTC124ET-Q is the documented NPN complement within the same product family. Direct substitution requires verifying polarity inversion and ensuring the replacement device meets the specific voltage and current ratings of the original circuit design.

FAQ

What are the nominal values for the internal bias resistors?

Both bias resistors, R1 (input) and R2, have a nominal value of 22 kΩ, resulting in a typical resistor ratio of 1.

Is this component suitable for automotive applications?

Yes, the PDTA124ET-Q is qualified according to the AEC-Q101 standard and is recommended for use in automotive applications.

What is the maximum collector-emitter voltage rating?

The maximum collector-emitter voltage (VCEO) with an open base is -50 V.