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The PDTA124ET,215 is a PNP Resistor-Equipped Transistor (RET) manufactured by Nexperia in the SOT-23 surface-mounted package. It integrates two bias resistors with a nominal value of 22 kΩ each and a ratio of 1. The device supports a collector-emitter voltage (VCEO) of -50 V and an output current capability of -100 mA. Key electrical characteristics include a DC current gain (hFE) minimum of 60 at -5 mA collector current, a transition frequency (fT) of 180 MHz, and a total power dissipation of 250 mW. It operates within a temperature range of -65 °C to +150 °C.
Verify the specific ordering suffix against official Nexperia documentation to confirm packaging details and manufacturing origin. Ensure compliance with RoHS directives and confirm that the SOT-23 footprint matches the target PCB layout requirements before finalizing procurement orders.
Select this component when a PNP configuration with integrated base and pull-down resistors is required. The 22 kΩ resistor values are suitable for standard logic interface applications. Verify thermal constraints as the maximum power dissipation is limited to 250 mW in the SOT-23 package.
This part belongs to the PDTA124E series of PNP resistor-equipped transistors. Other variants in this family include PDTA124EE (SOT416), PDTA124EM (SOT883), and PDTA124EU (SOT323). All share identical electrical specifications but differ in physical package dimensions and thermal characteristics.
PDTC124ET is the NPN complement within the same product family. For direct pin-compatible substitution, verify polarity requirements. No other specific cross-references are documented in the provided datasheet.
The device includes two integrated bias resistors (R1 and R2), both nominally 22 kΩ, which simplify the driving circuit by eliminating the need for external base resistors.
Yes, the PDTA124E series is qualified in accordance with the AEC-Q101 standard for stress test qualification of discrete semiconductors.
Reflow soldering is the only recommended soldering method for this component.