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The PDTA124EU,115 is a PNP Resistor-Equipped Transistor (RET) manufactured by Nexperia USA Inc. in the SOT323 surface-mounted package. It integrates bias resistors R1 and R2, both nominally 22 kΩ with a ratio of 1. The device supports a collector-emitter voltage (VCEO) of -50 V and an output current (IO) of -100 mA. Total power dissipation is rated at 200 mW at 25°C ambient temperature. The junction temperature range extends from -65°C to +150°C. It features a DC current gain (hFE) minimum of 60 at -5 mA and -5 V, and a transition frequency (fT) of 180 MHz.
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Select this component when a compact PNP switching solution with integrated base biasing is required. The SOT323 package offers a very small footprint suitable for space-constrained designs. Ensure the application operates within the -50 V collector-emitter voltage limit and does not exceed the 200 mW power dissipation rating without adequate thermal management on the PCB.
This part belongs to the PDTA124E series of PNP resistor-equipped transistors. The 'EU' designation specifically identifies the SOT323 (SC-70) plastic surface-mounted package variant. The series includes other package options such as SOT416, SOT883, and SOT23, all sharing similar electrical characteristics but differing in physical dimensions and thermal performance.
PDTC124EU is the NPN complement within the same family. For direct pin-compatible replacements in different packages, consider PDTA124ET (SOT23) or PDTA124EE (SOT416). Verify that the substitute maintains the required 22 kΩ bias resistor values and meets the -50 V / -100 mA specifications.