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The PDTA124TE,115 is a PNP resistor-equipped transistor manufactured by Nexperia. It integrates a single bias resistor (R1) of 22 kΩ with an open emitter resistor (R2). The device operates with a maximum collector-emitter voltage (VCEO) of -50 V and a DC output current (IO) of -100 mA. It is housed in the SOT416 (SC-75) plastic surface-mounted package. Key electrical characteristics include a typical DC current gain (hFE) of 100 at IC = -1 mA and a maximum collector-emitter saturation voltage (VCEsat) of -150 mV at IC = -10 mA.
Verify that the ordering suffix matches the required package variant. Confirm the manufacturer designation aligns with current corporate records, as standard product lines may transition between NXP Semiconductors and Nexperia B.V. Ensure the specific revision level of the datasheet corresponds to the production batch for accurate pinning and thermal data validation.
Select this component when a PNP transistor requires a fixed base drive without external resistors. The integrated 22 kΩ resistor sets the base current limit. Verify that the SOT416 package dimensions fit the PCB layout constraints. Ensure the operating ambient temperature remains within the specified range to maintain junction temperature limits under load conditions.
This part belongs to the PDTA124T series of PNP resistor-equipped transistors. It serves as the complement to the PDTC124TE NPN counterpart. The series is designed to replace discrete resistor-transistor networks in logic interfaces and driver stages, offering a standardized solution for general-purpose signal processing tasks.
Direct substitutes include other PNP RETs with similar 22 kΩ base resistance and -50 V ratings. Check package compatibility if replacing with variants from different manufacturers. Ensure the replacement maintains the same pinout configuration for the SOT416 footprint.