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The PDTA143EEF,115 is a PNP resistor-equipped transistor from the PDTA143E series manufactured by NXP USA Inc. It integrates bias resistors R1 and R2, both with a nominal value of 4.7 kΩ, into a single surface-mount device. The component operates within a collector-emitter voltage (VCEO) limit of 50 V and supports a maximum DC output current (IO) of 100 mA. It is housed in an SOT490 (SC-89) plastic package. Key electrical characteristics include a minimum DC current gain (hFE) of 30 at IC = -10 mA and VCE = -5 V, and a maximum collector-emitter saturation voltage (VCEsat) of 150 mV under specified conditions.
Verify the specific ordering suffix
Select this component for designs requiring a compact PNP solution with integrated base and emitter biasing. Ensure the required input resistance values align with the fixed 4.7 kΩ configuration. Verify that the SOT490 package dimensions fit the available PCB space and that the thermal dissipation requirements are met within the operating ambient temperature range.
This part belongs to the PDTA143E series of PNP resistor-equipped transistors. It serves as the PNP complement to the PDTC143EEF NPN counterpart. The series is designed to replace discrete resistor networks in transistor biasing circuits, offering a standardized alternative for various small-signal switching applications across consumer and industrial electronics.
The PDTC143EEF is the documented NPN complement within the same series. For direct functional replacement in PNP configurations, verify equivalent resistor ratios and voltage ratings against other PDTA143 variants or generic PNP RETs from different manufacturers, ensuring package compatibility.