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The PDTA143EM,315 is a PNP Resistor-Equipped Transistor (RET) in the SOT883 (SC-101) leadless ultra-small plastic package. It integrates bias resistors R1 and R2, both nominally 4.7 kΩ, with a ratio range of 0.8 to 1.2. Key electrical limits include a collector-emitter voltage (VCEO) of -50 V and an output current (IO) of -100 mA. The device features a maximum total power dissipation of 250 mW at 25 °C ambient temperature and a thermal resistance from junction to ambient of 500 K/W. It operates within a junction temperature range up to 150 °C.
Verify the specific ordering suffix matches the required packing method. The provided datasheet indicates that the PDTA143EM variant is available in 2 mm pitch, 8 mm tape and reel packaging. Confirm the exact quantity per reel aligns with production requirements before finalizing procurement orders.
Select this component when space constraints require an ultra-small footprint. Ensure the application logic levels are compatible with the integrated 4.7 kΩ input resistor. Verify that the -50 V collector-emitter voltage rating exceeds the maximum circuit voltage to prevent breakdown during operation.
This part belongs to the PDTA143E series of PNP resistor-equipped transistors. Other variants in this family include the PDTA143EE in SOT416, the PDTA143ET in SOT23, and the PDTA143EU in SOT323. All share identical electrical characteristics but differ in physical package dimensions and thermal performance.
Direct functional replacements within the same series include PDTA143EE, PDTA143ET, and PDTA143EU. Note that these alternatives utilize different packages (SOT416, SOT23, SOT323) and will require PCB layout modifications due to differing pinouts and physical footprints.