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The PDTA143EQAZ is a PNP Resistor-Equipped Transistor (RET) from Nexperia, housed in a DFN1010D-3 (SOT1215) package. It features built-in bias resistors R1 and R2, both nominally 4.7 kΩ. The device supports a collector-emitter voltage of -50 V and an output current of -100 mA. Key electrical characteristics include a DC current gain (hFE) minimum of 30 at -10 mA and -5 V, and a collector-emitter saturation voltage of -150 mV at -10 mA. The transition frequency is typically 180 MHz. Total power dissipation reaches 280 mW at 25°C ambient temperature.
Verify the specific ordering suffix against the manufacturer's latest documentation to ensure correct packaging and marking codes. Confirm that the DFN1010D-3 footprint matches the target PCB layout requirements. Check for any recent Product Change Notices regarding assembly sites or material composition updates before finalizing procurement orders.
Select this component when space constraints require a low-profile surface-mount solution with integrated biasing. Ensure the required base current aligns with the 4.7 kΩ internal resistor value. Verify thermal management capabilities on the FR4 PCB, as power derating curves indicate reduced dissipation at elevated ambient temperatures above 25°C.
This part belongs to the PDTA143/114/124/144EQA series, which shares the same DFN1010D-3 package but varies in internal resistor values. The NPN complement for this PNP device is the PDTC143EQA. All members of this series are designed for cost-effective digital switching applications requiring minimal external components.
Direct functional substitutes within the same package and specification include other PDTA143 variants from different manufacturers, provided they meet the 50V/100mA rating and 4.7kΩ resistor values. Cross-reference with the PDTC143EQA if an NPN configuration is acceptable.