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The PDTA143ET,215 is a PNP Resistor-Equipped Transistor (RET) manufactured by Nexperia USA Inc. in the SOT23 surface-mounted package. It integrates bias resistors R1 and R2 with nominal values of 4.7 kΩ each. The device supports an output current capability of -100 mA and withstands a collector-emitter voltage of -50 V. Total power dissipation reaches 250 mW at 25 °C ambient temperature. The component features a DC current gain minimum of 30 at -10 mA collector current and exhibits a transition frequency of 180 MHz.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details and availability status. Confirm that the requested part matches the exact SOT23 package configuration required for the intended PCB footprint. Ensure compliance with RoHS directives before finalizing procurement orders.
Select this component when space reduction and simplified biasing are required for PNP switching tasks. Verify that the -100 mA current rating and -50 V voltage limits accommodate the maximum load conditions. Consider the thermal resistance characteristics if operating near the upper temperature limits or in high-density layouts.
This device belongs to the PDTA143E series of PNP resistor-equipped transistors. The series includes variants such as PDTA143EE, PDTA143EM, and PDTA143EU, which utilize different package formats like SC-75, SOT883, and SC-70 respectively. All members share similar electrical characteristics but differ in physical dimensions and thermal performance profiles.
PDTC143ET serves as the NPN complement within the same product family.