ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：TRANS PREBIAS PNP 50V 0.1A SC75
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 Only
- Transistor Type：PNP - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：4.7 kOhms
- Resistor - Emitter Base (R2)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：200 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic：150mV @ 250µA, 5mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- Frequency - Transition：-
- Power - Max：150 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SC-75, SOT-416
- Supplier Device Package：SC-75
Download product information
Overview
The PDTA143TE,115 is a PNP resistor-equipped transistor from the PDTA143T series manufactured by Nexperia. It integrates a single bias resistor (R1) with a nominal value of 4.7 kΩ, while R2 remains open. The device features a maximum collector-emitter voltage (VCEO) of -50 V and a DC output current (IO) of -100 mA. Total power dissipation is limited to 150 mW in the SOT416 package at an ambient temperature of 25 °C. Key electrical characteristics include a minimum DC current gain (hFE) of 200 at IC = -1 mA and a maximum collector-emitter saturation voltage (VCEsat) of 150 mV at IC = -5 mA.
Feature Summary
- Integrates a built-in base bias resistor to simplify circuit design and reduce component count.
- Eliminates external biasing components, reducing pick-and-place costs during manufacturing.
- Designed for general-purpose switching and amplification applications.
Applications
- General purpose switching
- Amplification circuits
- Inverter and interface circuits
- Circuit driver
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm the exact package type and marking code. Ensure that the selected variant meets the required thermal resistance and power dissipation limits for the intended operating environment. Cross-reference the datasheet revision date to ensure compliance with the latest product specifications before finalizing procurement orders.
Selection Notes
Select this component when a PNP transistor with integrated biasing is required to minimize board space and assembly complexity. The PDTA143TE utilizes the SOT416 (SC-75) surface-mount package. Evaluate the 150 mW power dissipation limit relative to the expected load current and ambient temperature conditions to ensure reliable operation within the specified junction temperature range.
Part Context
This part belongs to the PDTA143T series of PNP resistor-equipped transistors. The series offers various package options including SOT23, SOT323, and SOT883. The PDTA143TE specifically corresponds to the SOT416 package with marking code 39. It serves as the PNP complement to the PDTC143TE NPN variant within the same product family.
Replacement Considerations
Direct functional substitutes within the same series include PDTA143TT (SOT23), PDTA143TU (SOT323), and PDTA143TM (SOT883). Verify pinout compatibility and thermal performance differences between packages before substituting.
