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The PDTA143TM,315 is a PNP resistor-equipped transistor manufactured by Nexperia USA Inc. It integrates a single bias resistor (R1) with a nominal value of 4.7 kΩ and an open emitter-base resistor (R2). The device operates in a DFN-1006-3 package (SOT883), featuring a collector-emitter voltage rating of -50 V and a continuous DC output current of -100 mA. Total power dissipation reaches 250 mW at ambient temperatures up to 25 °C. The junction temperature maximum is 150 °C, with an operating range from -65 °C to +150 °C.
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Select this component when a compact PNP solution with integrated biasing is required. The SOT883 package offers a small footprint suitable for space-constrained designs. Ensure the application does not require an internal emitter-base resistor, as R2 is open in this variant.
This part belongs to the PDTA143T series of PNP resistor-equipped transistors. It serves as the PNP complement to the PDTC143TM NPN counterpart. The series provides standardized biasing configurations for common logic families and interface requirements.
The PDTC143TM is the direct NPN complement within the same series. For identical PNP specifications in different packages, consider the PDTA143TT or PDTA143TU variants.