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The Nexperia PDTA143TMB is a PNP Resistor-Equipped Transistor (RET) housed in a DFN1006B-3 (SOT883B) leadless ultra-small SMD plastic package. It integrates a single bias resistor R1 of 4.7 kΩ with an open emitter-base resistor configuration. The device supports a maximum collector-emitter voltage (VCEO) of -50 V and a continuous output current (IO) of -100 mA. Total power dissipation reaches 250 mW at 25 °C ambient temperature, with a junction temperature limit of 150 °C. Transition frequency (fT) is typically 180 MHz at IC = -10 mA. The component is AEC-Q101 qualified for automotive environments.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details and availability status. Confirm that the DFN1006B-3 footprint matches the target PCB layout requirements. Ensure compliance with RoHS directives and check for any recent product change notices affecting the manufacturing process or material composition before finalizing procurement orders.
Select this component when a compact PNP switching solution with integrated base biasing is required. The open R2 configuration distinguishes it from variants with parallel emitter-base resistors. Verify that the -50 V rating and -100 mA current capability align with the load requirements. Consider the thermal resistance characteristics if operating in high-temperature environments without adequate PCB copper area for heat dissipation.
This part belongs to the PDTA143T series of PNP resistor-equipped transistors manufactured by Nexperia. It serves as the PNP counterpart to the PDTC143TMB NPN variant. The device utilizes the SOT883B package version, providing a smaller footprint compared to traditional SOT-23 packages while maintaining similar electrical performance characteristics for space-constrained designs.
PDTC143TMB is the complementary NPN device within the same series.