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The PDTA143TS,126 is a PNP resistor-equipped transistor from the PDTA143T series manufactured by NXP Semiconductors. It features a built-in bias resistor (R1) of 4.7 kΩ with R2 left open. The device is housed in an SOT54 (TO-92) plastic single-ended leaded package. Key electrical parameters include a collector-emitter voltage (VCEO) of -50 V and a DC output current (IO) of -100 mA. At a collector current of -1 mA and VCE of -5 V, the minimum DC current gain (hFE) is 200. The total power dissipation is rated at 500 mW at an ambient temperature of 25 °C.
Verify the ordering suffix '126' against official Nexperia or NXP documentation to confirm specific tape-and-reel packaging details. Confirm that the manufacturer designation aligns with current corporate records, as standard product lines transitioned to Nexperia B.V. Ensure the requested quantity matches the supplier's standard shipping configuration.
Select this component for applications requiring a PNP transistor with integrated base biasing. The SOT54 TO-92 package is suitable for through-hole mounting. Verify that the required current gain meets the hFE minimum of 200 and that the thermal resistance allows for adequate heat dissipation within the specified operating temperature range.
This part belongs to the PDTA143T series, which includes various package options such as SOT23, SOT323, and SOT883. All variants share the same internal circuit topology with a 4.7 kΩ base resistor. The PDTA143TS specifically utilizes the TO-92 form factor, distinguishing it from surface-mount counterparts like the PDTA143TT.
The PDTC143TS is the NPN complement within the same series. Other packages in the PDTA143T family offer identical electrical characteristics but differ in physical footprint and mounting method.
The built-in bias resistor (R1) has a typical value of 4.7 kΩ, with a maximum limit of 6.1 kΩ.
No, the R2 position is open (not connected) in the PDTA143T series.
The total power dissipation (Ptot) for the SOT54 package is 500 mW at an ambient temperature of 25 °C.