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The PDTA143XMB,315 is a PNP Resistor-Equipped Transistor (RET) housed in a leadless ultra-small SOT883B (DFN1006B-3) plastic package. It integrates an NPN transistor with built-in bias resistors to simplify circuit design and reduce component count. The device features a collector-emitter voltage (VCEO) of -50 V and a continuous output current (IO) of -100 mA. The internal input bias resistor (R1) has a typical value of 4.7 kΩ, while the R2/R1 ratio typically measures 2.1. Total power dissipation reaches 250 mW at 25 °C ambient temperature, with a maximum junction temperature of 150 °C.
Verify the specific ordering suffix
Select this PNP RET when space constraints require a compact DFN1006B-3 footprint. Ensure the -50 V collector-emitter rating meets the circuit's voltage requirements. Verify that the integrated 4.7 kΩ input resistor aligns with the desired base drive characteristics compared to discrete transistor solutions.
This component belongs to the PDTA143 series of resistor-equipped transistors manufactured by Nexperia. It serves as the PNP counterpart to the PDTC143XMB NPN variant. Both devices utilize the same SOT883B package and share similar electrical profiles, differing primarily in polarity and internal resistor configurations.
The PDTC143XMB is the direct NPN complement within the same package family. For pin-compatible replacements, verify the polarity requirement; if a PNP solution is needed, check other PDTA series members like PDTA143TM or PDTA143TT, ensuring the package type matches the PCB layout.
The input bias resistor (R1) has a typical value of 4.7 kΩ. The second resistor (R2) creates a typical R2/R1 ratio of 2.1.
Yes, the PDTA143XMB is qualified in accordance with the Automotive Electronics Council (AEC) standard Q101.
The total power dissipation (Ptot) is rated at 250 mW when the ambient temperature is 25 °C or lower.