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The PDTA143XQAZ is a PNP Resistor-Equipped Transistor (RET) housed in a leadless DFN1010D-3 (SOT1215) plastic package. It features an integrated bias resistor network with R1 at 4.7 kΩ and R2 at 10 kΩ. The device supports a collector-emitter voltage of -50 V and an output current capability of -100 mA. Key electrical characteristics include a DC current gain (hFE) of 50 at -10 mA, a collector-emitter saturation voltage of -100 mV at -10 mA, and a transition frequency of 180 MHz. Total power dissipation reaches 280 mW on standard FR4 PCBs.
Verify the specific suffix 'QA' corresponds to the DFN1010D-3 package variant when sourcing. Confirm RoHS compliance and REACH status through official Nexperia channels prior to integration. Ensure ordering documentation matches the exact part number PDTA143XQAZ to avoid confusion with other RET variants in the family.
Select this component for designs requiring a compact PNP transistor with fixed internal biasing. The 4.7 kΩ input resistor and 10 kΩ emitter-base resistor provide a specific gain ratio suitable for standard logic interfacing. Consider the low thermal resistance on multi-layer PCBs for high-density layouts.
This device belongs to the PDTA143X/123J/143Z/114YQA series of 50 V, 100 mA PNP resistor-equipped transistors. All members share the same DFN1010D-3 package and general form factor but differ in their internal R1 and R2 resistor values to accommodate various drive requirements.
PDTC143XQA serves as the NPN complement within the same series. For direct pin-compatible substitution in PNP roles, verify internal resistor tolerances against original design specifications.
The PDTA143XQAZ contains a base resistor (R1) of 4.7 kΩ and an emitter-base resistor (R2) of 10 kΩ.
Yes, the product has been qualified in accordance with the AEC-Q101 standard for discrete semiconductors.
The maximum collector-emitter voltage (VCEO) is -50 V.