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The PDTA143XQB-Q is a PNP Resistor-Equipped Transistor (RET) from Nexperia, housed in an ultra-small DFN1110D-3 (SOT8015) leadless SMD plastic package with side-wettable flanks. It features built-in bias resistors R1 (4.7 kΩ) and R2 (10 kΩ). Key electrical parameters include a collector-emitter voltage of -50 V, output current of -100 mA, total power dissipation up to 340 mW at 25 °C, and a junction temperature limit of 150 °C. The device has a typical transition frequency of 180 MHz and DC current gain of 50.
Verify the specific ordering suffix and marking code against the official datasheet before procurement. Confirm that the DFN1110D-3 package dimensions and soldering footprint requirements align with your PCB layout constraints. Ensure compliance with RoHS directives and check for any regional export control restrictions applicable to this discrete semiconductor.
Select this component when a compact PNP switching solution with integrated biasing is required. The DFN1110D-3 package offers a smaller footprint compared to traditional SOT23 packages. Consider the thermal resistance characteristics if operating near maximum power dissipation limits. Verify that the -50 V rating meets the system's voltage requirements.
This part belongs to the PDTA143X/123J/143Z/114Y/124XQB-Q series of 50 V, 100 mA PNP resistor-equipped transistors. It serves as a cost-saving alternative to standard discrete transistor combinations like the BC857-Q series in digital applications. The NPN complement for this specific RET configuration is the PDTC143XQB-Q.
Public confirmed substitute part numbers are not available in the provided documentation.