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The PDTA143ZE,115 is a PNP resistor-equipped transistor (RET) manufactured by NXP USA Inc. It integrates a single PNP bipolar junction transistor with built-in bias resistors in a compact SOT-323 surface-mount package. The device features a maximum collector-emitter voltage of 50 V and a continuous collector current rating of 100 mA. Internal resistance values are specified as R1 at 4.7 kOhms and R2 at 47 kOhms, providing a fixed bias ratio of 1:10. Key electrical characteristics include a minimum DC current gain (hFE) of 100 at Ic=10mA and Vce=5V, a maximum saturation voltage of 100mV at Ib=250µA and Ic=5mA, and a maximum power dissipation of 200 mW.
Verify the specific ordering code PDTA143ZE,115 against official NXP documentation to confirm the exact suffix designation and package variant. Ensure compatibility with RoHS3 compliance requirements and check for any recent production change notices (PCN) related to the SOT-323 package or manufacturing site before finalizing procurement specifications.
Select this component when a PNP switching solution with integrated biasing is required to reduce external component count. The 50V rating and 100mA current capacity suit low-voltage digital logic interfaces. Compare the 4.7k/47k internal resistor values against application drive requirements to ensure adequate base current without exceeding saturation limits.
This part belongs to the PDTA series of Resistor-Equipped Transistors (RETs) from NXP. These devices combine discrete transistors with precision thin-film resistors on a single silicon die. The series offers various configurations and resistor ratios to replace multiple discrete components, enhancing reliability and reducing PCB area in modern electronic designs.
Publicly confirmed substitute part numbers are not available in the provided source material. Verify pinout compatibility and electrical parameters if considering alternative RET manufacturers.