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The PDTA143ZEF,115 is a PNP resistor-equipped transistor (RET) manufactured by NXP USA Inc. It integrates bias resistors R1 and R2 to simplify circuit design. The device features a collector-emitter voltage (VCEO) of -50 V and a maximum DC output current (IO) of -100 mA. Internal resistors are specified as R1 = 4.7 kΩ and R2 = 47 kΩ. It operates within a junction temperature range up to 150 °C with a total power dissipation of 250 mW in the SOT490 package. The component utilizes an SC-89 surface-mount package.
Verify the specific ordering suffix against the manufacturer's latest documentation to confirm package type and manufacturing origin. Confirm RoHS compliance status and check for any product change notifications that may affect pinning or thermal characteristics before finalizing procurement specifications.
Select this component when a compact PNP solution with integrated base and emitter biasing is required. Ensure the application voltage does not exceed the -50 V collector-emitter breakdown rating. Verify that the required drive current remains within the -100 mA limit and that the SOT490 package dimensions fit the target PCB layout constraints.
This part belongs to the PDTA143Z series of PNP resistor-equipped transistors. It serves as the complement to the PDTC143ZEF,115 NPN variant. The series provides standardized internal resistance ratios to facilitate consistent switching performance across various general-purpose electronic applications requiring minimal external components.
The PDTC143ZEF,115 is the documented NPN complement within the same series. Other packages in the PDTA143Z family share identical electrical characteristics but differ in physical footprint and pin configuration.