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The PDTA143ZM,315 is a PNP Resistor-Equipped Transistor (RET) manufactured by Nexperia USA Inc. It integrates bias resistors into an ultra-small DFN1006-3 (SOT883) plastic package with dimensions of 1 mm x 0.6 mm x 0.48 mm. The device features a collector-emitter voltage (VCEO) of -50 V and an output current capability of -100 mA. Internal resistor values are specified as R1 = 4.7 kΩ and R2 = 47 kΩ, yielding a nominal ratio of 10. Qualified under AEC-Q101 standards, it supports surface-mount reflow soldering and operates within an ambient temperature range of -65 °C to +150 °C.
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Select this component when space constraints require an ultra-small footprint such as the DFN1006-3 package. Ensure the design accommodates the -50 V collector-emitter voltage rating and -100 mA output current limit. Verify that the integrated 4.7 kΩ input resistor aligns with the required drive current for the controlled load or IC input interface.
This part belongs to the PDTA143Z family of PNP resistor-equipped transistors. It serves as the complement to the NPN PDTC143ZM. Both devices share identical electrical characteristics and packaging but differ in polarity. The PDTA143ZM utilizes the SOT883 package designation for its DFN1006-3 form factor.
The NXP BZX5C5V1 datasheet lists the PDTA143ZU3HZGT106 as a recommended replacement for the discontinued PDTA143ZUBHZGTL. However, the PDTA143ZU3HZGT106 uses a UMT3 (SOT-323) package, which differs from the DFN1006-3 (SOT883) package of the PDTA143ZM. Electrical specifications remain similar, but physical pinout and board layout compatibility must be verified before substitution.