PDTA143ZMB,315

Overview

The PDTA143ZMB,315 is a PNP Resistor-Equipped Transistor (RET) housed in a leadless DFN1006B-3 (SOT883B) package with dimensions of 1.0 x 0.6 x 0.37 mm. It features an integrated input bias resistor R1 of 4.7 kΩ and a bias resistor ratio of 10. The device supports a maximum collector-emitter voltage (VCEO) of -50 V and a continuous output current (IO) of -100 mA. Total power dissipation is rated at 250 mW at 25 °C ambient temperature, with a junction temperature limit of 150 °C. It includes built-in resistors to simplify circuit design and reduce component count.

Feature Summary

• Built-in bias resistors for simplified circuit design
• Leadless ultra-small SMD plastic package
• Low package height of 0.37 mm
• AEC-Q101 qualified for automotive applications

Applications

• Low-current peripheral driver
• Control of IC inputs
• Mobile applications
• Replaces general-purpose transistors in digital applications

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component when space constraints require a leadless package with a height under 0.4 mm. Ensure the application operates within the -50 V collector-emitter voltage limit and does not exceed the 250 mW power dissipation rating without adequate thermal management on the PCB. Verify that the NPN complement PDTC143ZMB meets complementary circuit requirements if needed.

Part Context

This part belongs to the PDTA143 series of PNP resistor-equipped transistors manufactured by Nexperia. It serves as the PNP counterpart to the PDTC143ZMB NRET. The device is designed to replace discrete transistor and resistor networks in digital switching applications, offering a compact solution for signal conditioning and interface circuits.

Replacement Considerations

PDTC143ZMB