PDTA143ZQB-QZ

$0.20

Description：TRANS PREBIAS PNP 50V 0.1A 3DFN
Series：-

SKU:8572fbf054a2 Category: Single, Pre-Biased Bipolar Transistors Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：TRANS PREBIAS PNP 50V 0.1A 3DFN
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Resistors Included：R1 and R2
Transistor Type：PNP - Pre-Biased
Current - Collector (Ic) (Max)：100 mA
Voltage - Collector Emitter Breakdown (Max)：50 V
Resistor - Base (R1)：4.7 kOhms
Resistor - Emitter Base (R2)：47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic：100mV @ 250µA, 5mA
Current - Collector Cutoff (Max)：100nA
Frequency - Transition：180 MHz
Power - Max：340 mW
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount, Wettable Flank
Package / Case：3-XDFN Exposed Pad
Supplier Device Package：DFN1110D-3

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PDTA143ZQB-QZ

Overview

The PDTA143ZQB-Q is a PNP Resistor-Equipped Transistor (RET) from Nexperia, housed in an ultra-small DFN1110D-3 (SOT8015) leadless SMD plastic package with side-wettable flanks. It features built-in bias resistors R1 of 4.7 kΩ and R2 of 47 kΩ. The device supports a maximum collector-emitter voltage (VCEO) of -50 V and an output current (IO) of -100 mA. Key electrical characteristics include a minimum DC current gain (hFE) of 100 at IC = -10 mA and VCE = -5 V, a typical transition frequency (fT) of 180 MHz, and a total power dissipation (Ptot) of 340 mW on a standard FR4 PCB. It is qualified according to AEC-Q101 for automotive applications.

Feature Summary

Built-in bias resistors simplify circuit design and reduce component count
Ultra-thin package height of 0.5 mm suitable for space-constrained designs
Side-wettable flanks facilitate Automatic Optical Inspection (AOI)
Qualified according to AEC-Q101 for automotive use

Applications

Digital applications
Controlling IC inputs
Switching loads

Procurement Notes

Verify the specific ordering suffix and marking code against the official datasheet before procurement. Confirm that the DFN1110D-3 footprint matches the design requirements. Ensure compliance with AEC-Q101 standards if the application requires automotive qualification. Check the most recent product status documentation to confirm production availability.

Selection Notes

Select this component when a compact PNP transistor with integrated biasing is required. The 4.7 kΩ input resistor and 47 kΩ emitter-base resistor define the drive characteristics. Consider the low package profile and thermal resistance values when designing for high-density or thermally constrained environments. Verify compatibility with existing NPN complements like PDTC143ZQB-Q.

Part Context

This part belongs to the PDTA143X/123J/143Z/114Y/124XQB-Q series, which shares the same DFN1110D-3 package and general specifications but varies in internal resistor values. It serves as a cost-saving alternative to older discrete transistor solutions like the BC857-Q series in digital switching applications.