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The PDTA143ZT,215 is a PNP Resistor-Equipped Transistor (RET) manufactured by Nexperia USA Inc. in an SOT23 surface-mounted package. It integrates bias resistors R1 and R2 with nominal values of 4.7 kΩ and 47 kΩ respectively. The device supports a maximum collector-emitter voltage (VCEO) of -50 V and an output current (IO) of -100 mA. Key electrical characteristics include a DC current gain (hFE) of at least 100 at IC = -10 mA and VCE = -5 V, a collector-emitter saturation voltage (VCEsat) of -100 mV max at IC = -5 mA, and a transition frequency (fT) of 180 MHz typical. Total power dissipation is rated at 250 mW.
Verify the specific ordering suffix to confirm the packaging format, as the base part number may be available in different reel or tape configurations. Confirm that the non-automotive qualified status aligns with your application requirements, as this specific variant lacks AEC-Q101 certification. Ensure the sourcing channel provides original manufacturer documentation to validate authenticity and traceability before finalizing procurement orders.
Select this component when a PNP transistor with integrated biasing is required to minimize external passive components. The fixed resistor ratio of approximately 10 suits standard inverter and interface circuits. Verify that the -50 V collector-emitter voltage rating meets the system's peak voltage constraints. Consider the SOT23 footprint dimensions against available PCB real estate during the layout phase.
This device belongs to the PDTA143Z series of PNP resistor-equipped transistors. It serves as the complement to the NPN PDTC143ZT. The series is designed to replace discrete BJT and resistor combinations, offering a standardized solution for general-purpose switching and amplification tasks in consumer and industrial electronics.
PDTC143ZT is the NPN complement within the same family. For direct functional substitution in PNP roles, verify equivalent resistor ratios and voltage ratings in other RET families.