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Product Detailed Parameters
- Description：TRANS PREBIAS PNP 50V 0.1A 3DFN
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：PNP - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：47 kOhms
- Resistor - Emitter Base (R2)：47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic：100mV @ 500µA, 10mA
- Current - Collector Cutoff (Max)：100nA
- Frequency - Transition：180 MHz
- Power - Max：340 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount, Wettable Flank
- Package / Case：3-XDFN Exposed Pad
- Supplier Device Package：DFN1110D-3
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Overview
The PDTA144EQBZ is a PNP Resistor-Equipped Transistor (RET) from the Nexperia PDTA143/114/124/144EQB series. It features built-in bias resistors R1 and R2, both nominally 47 kΩ. The device operates with a collector-emitter voltage of -50 V and an output current capability of 100 mA. It is housed in an ultra-small DFN1110D-3 (SOT8015) leadless package measuring 1.1 x 1.0 x 0.48 mm with side-wettable flanks. Key electrical characteristics include a DC current gain (hFE) of 80 at -5 mA and a transition frequency of 180 MHz.
Feature Summary
- Integrates dual bias resistors to simplify circuit design and reduce component count.
- Ultra-thin package profile of 0.5 mm height suitable for space-constrained applications.
- Side-wettable flanks enable Automatic Optical Inspection (AOI) of solder joints.
Applications
- Digital logic applications
- Controlling IC inputs
- Switching loads
Procurement Notes
Verify the specific ordering code against the manufacturer's official database to ensure correct package variant and marking code. Confirm that the DFN1110D-3 footprint matches the target PCB layout requirements. Check for any recent product status updates or lifecycle notices directly from the supplier before finalizing procurement plans.
Selection Notes
Select this component when a compact PNP switching solution with integrated base biasing is required. The 47 kΩ resistor values are suitable for standard digital interface driving. Ensure the application voltage does not exceed the -50 V collector-emitter rating and that thermal dissipation remains within the specified junction temperature limits.
Part Context
This part belongs to the PDTA14x EQB series, which shares the same SOT8015 package but varies in internal resistor values. Complementary NPN versions are available as PDTC143EQB through PDTC144EQB. The series is designed as a cost-saving alternative to discrete transistor and resistor combinations in digital circuits.
Replacement Considerations
Direct substitutes include other PNP RETs with similar 47 kΩ bias resistors and compatible pinouts. Verify package dimensions and thermal resistance if replacing with components from different manufacturers. Ensure the replacement supports the required -50 V breakdown voltage and 100 mA current handling.
FAQ
What are the nominal values of the built-in resistors?
Both R1 (input/base) and R2 (emitter/GND) have nominal values of 47 kΩ.
How does the package facilitate quality inspection?
The DFN1110D-3 package features side-wettable flanks, allowing for Automatic Optical Inspection (AOI) of the solder joints.
What is the maximum collector-emitter voltage?
The maximum collector-emitter voltage (VCEO) is -50 V.
