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The PDTA144ES,126 is a PNP resistor-equipped transistor from the PDTA144E series manufactured by NXP USA Inc. It integrates two bias resistors (R1 and R2) with a typical value of 47 kΩ each into a single component. The device operates within a collector-emitter voltage range of -50 V and supports a DC output current up to -100 mA. It utilizes a SOT54 (TO-92) plastic through-hole package with three leads: base, collector, and emitter. The unit features a maximum total power dissipation of 500 mW at 25 °C ambient temperature and a junction temperature limit of 150 °C.
Verify the specific ordering suffix
Select this component when a compact PNP solution with integrated biasing is required for general-purpose switching or amplification tasks. Ensure the application voltage does not exceed the -50 V collector-emitter rating and that the thermal environment allows for the specified 500 mW power dissipation in the TO-92 package.
This part belongs to the PDTA144E series of PNP resistor-equipped transistors. The series includes various package options such as surface-mount types like SOT23 and SC-70, alongside through-hole variants. The PDTA144ES specifically denotes the TO-92 configuration, providing a legacy leaded option for designs requiring this form factor.
The datasheet lists PDTC144ES as the NPN complement. For direct functional replacement in existing designs, verify pinout compatibility and ensure the complementary polarity meets the circuit requirements.