PDTA144VMB,315

Overview

The PDTA144VMB,315 is a PNP Resistor-Equipped Transistor (RET) housed in a leadless DFN1006B-3 (SOT883B) package with dimensions of 1.0 x 0.6 x 0.37 mm. It features built-in bias resistors R1 and R2 with typical values of 47 kΩ and 10 kΩ respectively, yielding a ratio of 0.21. The device supports a collector-emitter voltage (VCEO) of -50 V and an output current (IO) of -100 mA. Total power dissipation is rated at 250 mW at 25 °C ambient temperature, with a maximum junction temperature of 150 °C. The component operates within an ambient temperature range of -65 °C to +150 °C.

Feature Summary

• Integrates built-in bias resistors to simplify circuit design and reduce component count.
• Features a leadless ultra-small SMD plastic package with low profile height.
• Qualified for automotive applications according to AEC-Q101 standards.

Applications

• Low-current peripheral driver
• Control of IC inputs
• Mobile applications

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this PNP RET when space constraints require a leadless DFN1006B-3 package. Ensure the required input resistance matches the 47 kΩ specification. Verify that the -50 V collector-emitter voltage rating accommodates the circuit's peak voltages. Confirm compatibility with the -65 °C to +150 °C operating temperature range for the target environment.

Part Context

This component belongs to the PDTA144V series of PNP resistor-equipped transistors. It serves as the PNP counterpart to the NPN PDTC144VMB. Both devices share identical electrical characteristics and packaging but differ in transistor polarity. The series is designed for general-purpose switching and amplification in digital applications where board space is limited.

Replacement Considerations

The NPN complement is the PDTC144VMB. For alternative packages with similar electrical characteristics, consider the PDTA144WT (SOT23) or PDTA144WM (DFN1006). Verify pinout compatibility and thermal performance before substitution.