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The PDTB113EK is a PNP resistor-equipped transistor (RET) from the NXP PDTB113E series, housed in an SOT346 (SC-59A/TO-236) surface-mount package. It integrates two bias resistors, R1 and R2, both nominally 1 kΩ with a ratio tolerance of ±10%. The device supports a collector-emitter voltage (VCEO) of -50 V and a continuous DC output current (IO) of -500 mA. Key electrical characteristics include a maximum total power dissipation of 250 mW at 25 °C ambient temperature, a thermal resistance (Rth j-a) of 500 K/W, and a DC current gain (hFE) minimum of 33 at IC = -50 mA.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm the exact package variant and packing method. Ensure that the required tape and reel specifications match the production line equipment capabilities. Cross-reference the marking code 'E4' with the datasheet to validate authenticity upon receipt.
Select this component when a compact PNP solution with integrated base and pull-down resistors is required. The SOT346 package is suitable for space-constrained surface-mount designs. Verify that the -50 V voltage rating and -500 mA current capacity meet the load requirements. Consider the 250 mW power dissipation limit relative to the PCB copper area and ambient operating conditions.
The PDTB113EK belongs to the PDTB113E family of PNP resistor-equipped transistors. It serves as a cost-saving alternative to discrete BC807 series components in digital applications. The NPN complement for this device is the PDTD113EK, which shares similar electrical characteristics and package options within the same product family.
The PDTD113EK is the documented NPN complement within the same series. For direct substitution in PNP circuits, verify that the replacement part matches the -50 V voltage rating, -500 mA current capability, and integrated resistor values specified in the original design parameters.