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The PDTB113EQAZ is a PNP Resistor-Equipped Transistor (RET) from Nexperia, housed in a leadless DFN1010D-3 (SOT1215) package with visible side pads. It features built-in bias resistors of 1 kΩ each (R1 and R2). Key electrical parameters include a collector-emitter voltage (VCEO) of -50 V, an output current (IO) of -500 mA, and a total power dissipation of 325 mW at 25°C on a standard FR4 PCB. The device has a junction temperature range up to 150°C and is AEC-Q101 qualified for automotive applications.
Verify the complete part number including the 'Z' suffix against official Nexperia documentation to confirm specific reel or tape-and-reel packaging configurations. Ensure the ordering code matches the required DFN1010D-3 variant. Cross-reference the binary marking code '00' on the component body to validate authenticity and traceability during incoming inspection.
Select this PNP RET when a low-profile surface-mount solution is required for driving IC inputs or switching moderate loads. The integrated 1 kΩ resistors eliminate external base drive components. Consider the thermal resistance characteristics based on the specific PCB copper layer configuration, as power dissipation varies significantly between single-sided and four-layer board layouts.
This component belongs to the PDTB113/123/143/114EQA series of 50 V, 500 mA PNP resistor-equipped transistors. All members share the same DFN1010D-3 package and general electrical limits, differing only in the values of the internal bias resistors. The NPN complement for this family is the PDTD113EQA series.
Direct functional substitutes within the same package and specification include other PDTB113 variants from different manufacturers if pinout compatibility is confirmed. For resistor value changes, consider PDTB123EQA (2.2 kΩ), PDTB143EQA (4.7 kΩ), or PDTB114EQA (10 kΩ) from the same Nexperia series.