PDTB113ET,215

PDTB113ET,215

$0.21
  • Description:TRANS PREBIAS PNP 50V TO236AB
  • Series:-

SKU:b516ac7e13f0 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS PNP 50V TO236AB
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 and R2
  • Transistor Type:PNP - Pre-Biased
  • Current - Collector (Ic) (Max):500 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):1 kOhms
  • Resistor - Emitter Base (R2):1 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:33 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:250 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:TO-236AB

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PDTB113ET,215

Overview

The PDTB113ET,215 is a PNP Resistor-Equipped Transistor (RET) manufactured by Nexperia USA Inc. It features an integrated bias network with R1 = 1 kΩ and R2 = 1 kΩ, housed in a SOT23 surface-mount package. Key electrical parameters include a collector-emitter voltage (VCEO) of -50 V, an output current (IO) of -500 mA, and a total power dissipation (Ptot) of 250 mW at 25 °C ambient temperature. The device exhibits a DC current gain (hFE) of 33 at IC = -50 mA and VCE = -5 V, with a collector-emitter saturation voltage (VCEsat) of -0.3 V at IC = -50 mA and IB = -2.5 mA. It is qualified under the AEC-Q101 standard for automotive applications.

Feature Summary

  • Built-in bias resistors simplify circuit design and reduce component count
  • AEC-Q101 qualification ensures suitability for automotive environments
  • ±10% resistor ratio tolerance provides consistent performance

Applications

  • Digital applications in automotive and industrial segments
  • Cost-saving alternative to BC807 series in digital circuits
  • Control of IC inputs
  • Switching loads

Procurement Notes

Verify the specific ordering suffix matches the required packaging configuration before procurement. Confirm that the AEC-Q101 qualification aligns with project reliability requirements. Ensure the SOT23 footprint dimensions are compatible with the target PCB layout. Cross-reference the marking code %7U with manufacturing site codes if traceability is critical for the supply chain.

Selection Notes

Select this component when a compact PNP switching solution with integrated biasing is required. The 500 mA current capability supports medium-load driving tasks. Verify that the -50 V rating meets the system's voltage headroom needs. Consider the thermal resistance of 500 K/W in free air for heat dissipation planning in dense layouts.

Part Context

This part belongs to the PDTB113E series of PNP resistor-equipped transistors. It serves as the PNP complement to the NPN PDTD113ET model. Both devices share similar electrical characteristics and package types, facilitating balanced design options for complementary push-pull or differential configurations in Nexperia's discrete semiconductor portfolio.

Replacement Considerations

Direct substitutes within the same family include other variants from the PDTB113E_SER_2 series. For general-purpose replacements, verify pin compatibility and electrical ratings against standard PNP transistors like the BC807 series, noting the internal resistor differences.

PDTB113ET,215PDTB113ET,215
$0.21
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