SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The PDTB113ET,215 is a PNP Resistor-Equipped Transistor (RET) manufactured by Nexperia USA Inc. It features an integrated bias network with R1 = 1 kΩ and R2 = 1 kΩ, housed in a SOT23 surface-mount package. Key electrical parameters include a collector-emitter voltage (VCEO) of -50 V, an output current (IO) of -500 mA, and a total power dissipation (Ptot) of 250 mW at 25 °C ambient temperature. The device exhibits a DC current gain (hFE) of 33 at IC = -50 mA and VCE = -5 V, with a collector-emitter saturation voltage (VCEsat) of -0.3 V at IC = -50 mA and IB = -2.5 mA. It is qualified under the AEC-Q101 standard for automotive applications.
Verify the specific ordering suffix matches the required packaging configuration before procurement. Confirm that the AEC-Q101 qualification aligns with project reliability requirements. Ensure the SOT23 footprint dimensions are compatible with the target PCB layout. Cross-reference the marking code %7U with manufacturing site codes if traceability is critical for the supply chain.
Select this component when a compact PNP switching solution with integrated biasing is required. The 500 mA current capability supports medium-load driving tasks. Verify that the -50 V rating meets the system's voltage headroom needs. Consider the thermal resistance of 500 K/W in free air for heat dissipation planning in dense layouts.
This part belongs to the PDTB113E series of PNP resistor-equipped transistors. It serves as the PNP complement to the NPN PDTD113ET model. Both devices share similar electrical characteristics and package types, facilitating balanced design options for complementary push-pull or differential configurations in Nexperia's discrete semiconductor portfolio.
Direct substitutes within the same family include other variants from the PDTB113E_SER_2 series. For general-purpose replacements, verify pin compatibility and electrical ratings against standard PNP transistors like the BC807 series, noting the internal resistor differences.