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The PDTB113ZQAZ is a PNP Resistor-Equipped Transistor (RET) from Nexperia, housed in a leadless DFN1010D-3 (SOT1215) package. It features an integrated bias resistor network with R1 at 1 kΩ and R2 at 10 kΩ. The device supports a collector-emitter voltage of -50 V and an output current of -500 mA. Key electrical characteristics include a DC current gain (hFE) minimum of 70 at -50 mA, a collector-emitter saturation voltage of -100 mV at -50 mA, and a transition frequency of 150 MHz. It operates within a junction temperature range of -55°C to +150°C.
Verify the specific ordering suffix against the manufacturer's latest documentation to ensure correct packaging and marking codes. Confirm that the DFN1010D-3 footprint matches your PCB layout requirements. Check for any recent Product Change Notifications regarding assembly sites or material updates before finalizing procurement plans.
Select this component when a compact PNP transistor with fixed biasing is required. Ensure the 1 kΩ input resistor aligns with your drive source impedance. Verify thermal dissipation capabilities based on your specific PCB copper area and ambient temperature conditions.
This part belongs to the PDTB113Z_123Y_143XQA_SER family, which includes variants with different resistor values. The NPN complement for this device is the PDTD113ZQA. All members share the same SOT1215 package and general electrical characteristics, differing primarily in their internal resistor configurations.
Direct substitutes within the same family include PDTB123YQA and PDTB143XQA, provided the different resistor ratios are acceptable for the application.