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Product Detailed Parameters
- Description：PDTB113ZT-Q/SOT23/TO-236AB
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR)
- Resistors Included：-
- Transistor Type：-
- Current - Collector (Ic) (Max)：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Resistor - Base (R1)：-
- Resistor - Emitter Base (R2)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Vce Saturation (Max) @ Ib, Ic：-
- Current - Collector Cutoff (Max)：-
- Frequency - Transition：-
- Power - Max：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
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Overview
The PDTB113ZT-QR is a PNP Resistor-Equipped Transistor (RET) manufactured by Nexperia. It integrates a single PNP transistor with built-in bias resistors in a compact SOT-323 (SC-70) surface-mount package. The device supports a maximum collector-emitter voltage of 50 V and a continuous collector current of 500 mA, with a power dissipation rating of 250 mW. It features a typical input resistance of 4.7 kΩ and a fixed resistor ratio of 2.2. Designed for high-temperature environments, it operates within a junction temperature range up to 175 °C.
Feature Summary
- Integrates a PNP transistor with built-in bias resistors to simplify circuit design and reduce component count.
- Offers ±10% tolerance on the internal resistor ratio for consistent performance across applications.
- Engineered for high-temperature reliability, supporting operation up to 175 °C.
Applications
- Controlling IC inputs
- Cost-saving alternative to discrete BC817 series in digital applications
- Switching loads
Procurement Notes
Verify the specific suffix 'QR' against the official Nexperia datasheet to confirm reel packaging specifications and tape-and-reel dimensions. Ensure the ordering part number matches the required SOT-323 variant. Cross-reference the RoHS compliance status directly with the manufacturer's documentation prior to procurement.
Selection Notes
Select this component when space constraints require an integrated solution replacing discrete transistors and bias resistors. The 500 mA current capability and 50 V voltage rating suit general-purpose switching tasks. Verify that the 4.7 kΩ input resistance aligns with the driving source requirements for the target application logic levels.
Part Context
This device belongs to the PDTB113Z series of PNP resistor-equipped transistors. It serves as the PNP complement to the NPN PDTD113ZU model. Both devices share similar electrical characteristics but differ in polarity, allowing designers to implement complementary push-pull or differential circuits using standardized packages.
Replacement Considerations
Direct functional substitutes include the PDTB113ZTA and PDTB113ZT. Designers should verify pinout compatibility and thermal characteristics when transitioning between these variants to ensure seamless integration without PCB layout modifications.
FAQ
What is the maximum operating temperature for the PDTB113ZT-QR?
The device is designed for high-temperature applications with a maximum junction temperature of 175 °C.
Does the PDTB113ZT-QR include external components?
No, it is a Resistor-Equipped Transistor (RET) that integrates the PNP transistor and bias resistors into a single SOT-323 package.
What is the typical input resistance value?
The typical input resistance is 4.7 kΩ.
