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The PDTB113ZT is a PNP Resistor-Equipped Transistor (RET) manufactured by Nexperia USA Inc., housed in a SOT23 (TO-236AB) surface-mount package. It features an integrated bias resistor network with R1 at 1 kΩ and R2 at 10 kΩ, providing a nominal ratio of 10. The device supports a maximum collector-emitter voltage (VCEO) of -50 V and a continuous output current (IO) of -500 mA. Key electrical characteristics include a DC current gain (hFE) of 70 at -50 mA and a collector-emitter saturation voltage (VCEsat) of -300 mV under specified conditions. It operates within an ambient temperature range of -65 °C to +150 °C and has been qualified according to the AEC-Q101 standard.
Verify the specific ordering suffix matches the required packaging configuration before purchase. Confirm that the AEC-Q101 qualification aligns with target automotive reliability standards. Ensure the SOT23 footprint dimensions are compatible with existing PCB layouts. Check for any recent product change notices regarding marking codes or assembly sites.
Select this component when a compact PNP solution with integrated biasing is required for digital switching. Compare against the NPN complement PDTD113ZT for complementary logic designs. Evaluate thermal resistance requirements if operating near the upper ambient temperature limits. Consider the ±10% resistor tolerance for precision biasing needs.
This part belongs to the PDTB113 series of PNP resistor-equipped transistors from Nexperia. It serves as the PNP counterpart to the NPN PDTD113ZT. The series is designed to replace discrete transistor and resistor combinations, offering a space-saving alternative for digital logic interfaces and load switching applications in consumer and automotive electronics.
The NPN equivalent is PDTD113ZT. For direct pin-compatible replacements, verify polarity and internal resistor values match the original design requirements.