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The PDTB113ZUF is a PNP Resistor-Equipped Transistor (RET) housed in an SOT323 (SC-70) surface-mounted package. It features a collector-emitter voltage of -50 V and an output current capability of -500 mA. The device integrates two bias resistors: R1 (input) at 1 kΩ and R2 (base-emitter) at 10 kΩ, yielding a resistor ratio of 10. Key electrical characteristics include a DC current gain (hFE) minimum of 70, a transition frequency of 140 MHz, and a total power dissipation of 300 mW. It operates within an ambient temperature range of -55 °C to +175 °C and is qualified under AEC-Q101 standards.
Verify the specific ordering suffix against the manufacturer's latest documentation to confirm availability and exact specifications. Ensure that the selected variant matches the required resistor values and package type for your design. Cross-reference the part number with official Nexperia distributors to confirm current production status and lead times.
Select this component when a compact PNP transistor with integrated biasing is required for space-constrained designs. The 1 kΩ input resistor and 10 kΩ base-emitter resistor are suitable for standard logic interface applications. Consider the AEC-Q101 qualification if the application demands automotive-grade reliability and thermal stability up to 175 °C.
The PDTB113ZUF belongs to the PDTB1xxxU series of PNP resistor-equipped transistors from Nexperia. This family shares the SOT323 package and general electrical characteristics but varies in internal resistor values. The 'Z' suffix typically denotes specific resistor configurations within the series, distinguishing it from other variants like the PDTB113EU or PDTB123YU.
Direct substitutes within the same series include PDTB113EU, though resistor ratios differ. For functional equivalents without integrated resistors, consider discrete PNP transistors like the BC807 series, ensuring external biasing components are added to the design.