PDTB114ETVL

Overview

The PDTB114ETVL is a PNP Resistor-Equipped Transistor (RET) from the PDTB1xxxT series, manufactured by Nexperia USA Inc. It integrates a PNP transistor with built-in bias resistors R1 and R2 in a TO-236AB (SOT-23) surface-mount package. The device supports a collector-emitter voltage of -50 V and an output current of -500 mA. Key electrical parameters include a DC current gain (hFE) of 70 at IC = -50 mA and VCE = -5 V, a transition frequency of 140 MHz, and a total power dissipation of 320 mW at 25 °C. The internal resistors are specified as R1 = 10 kΩ and R2 = 10 kΩ, with a resistor ratio tolerance of ±10%. The component is qualified to AEC-Q101 standards for automotive applications.

Feature Summary

• Integrates PNP transistor with dual bias resistors to simplify circuit design and reduce component count.
• Qualified to AEC-Q101 standards for use in automotive applications.
• Supports high-temperature operation up to 175 °C junction temperature.
• Provides ±10% resistor ratio tolerance for consistent performance.

Applications

• IC inputs control
• Switching loads
• Digital applications

Procurement Notes

Verify the specific ordering suffix 'VL' against official Nexperia documentation to confirm tape-and-reel packaging specifications and manufacturing site codes. Ensure compatibility with standard SOT-23 footprints during PCB layout. Confirm that the AEC-Q101 qualification meets the specific reliability requirements of the target automotive or industrial application before finalizing procurement.

Selection Notes

Select this component when a compact PNP switching solution with integrated base biasing is required. The 10 kΩ input resistor value determines the drive current requirements from the controlling logic. Verify that the -50 V collector-emitter voltage rating exceeds the maximum circuit voltage. Consider the thermal resistance characteristics if operating near the 175 °C junction temperature limit.

Part Context

The PDTB114ETVL belongs to the PDTB1xxxT family of PNP resistor-equipped transistors. This series includes variants with different resistor values, such as the PDTB143ET and PDTB143XT. All members share the same TO-236AB package and core transistor characteristics, differing primarily in the internal bias resistor configurations to suit various digital interface needs.

Replacement Considerations

Official substitutes within the same family include PDTB114ETR and PDTB114EVT. For generic replacements, verify that alternative PNP RETs match the -50 V rating, -500 mA current capacity, and similar resistor values to ensure functional equivalence without redesigning the bias network.

FAQ

What are the values of the built-in bias resistors?

The PDTB114ETVL contains two built-in resistors: R1 (input/base) is 10 kΩ and R2 (base-emitter) is 10 kΩ.

Is this component suitable for automotive applications?

Yes, the PDTB114ETVL is qualified in accordance with the AEC-Q101 standard for discrete semiconductors.

What is the maximum junction temperature?

The maximum junction temperature (Tj) for the PDTB114ETVL is 175 °C.