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The PDTB114EU-Q is a PNP Resistor-Equipped Transistor (RET) manufactured by Nexperia USA Inc. It integrates bias resistors within a compact SOT323 (SC-70) surface-mounted package. The device supports an output current of 500 mA and withstands a collector-emitter voltage of -50 V. Key electrical parameters include a typical transition frequency of 140 MHz, a DC current gain of 70 at -50 mA, and a maximum collector-base cut-off current of -100 nA. The built-in input resistor (R1) has a nominal value of 10 kΩ with a ±10% tolerance.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging configuration. Confirm that the requested part number matches the exact automotive grade requirements specified in the product data sheet before finalizing procurement orders.
Select this component when a small form factor and integrated biasing are required for PNP switching applications. Ensure the design accommodates the -50 V collector-emitter voltage rating and verify that the 10 kΩ internal base resistor aligns with the target drive current requirements.
This device belongs to the PDTB114 family of NPN/PNP resistor-equipped transistors produced by Nexperia. These components are designed to replace discrete transistor and resistor combinations, offering space savings and simplified assembly processes for modern electronic designs.
Direct substitutes within the same family include PDTB114EUX and PDTB114ETR. Verify pin compatibility and package dimensions (SOT323/SC-70) when considering cross-references from other manufacturers.
The device is qualified for high-temperature applications with a maximum junction temperature of 175 °C.
It is housed in a very small SOT323 (SC-70) Surface-Mounted Device plastic package with three leads.
Yes, the PDTB114EU-Q is qualified according to the AEC-Q101 standard and is recommended for use in automotive applications.