PDTB114EUF

Overview

The PDTB114EUF is a PNP Resistor-Equipped Transistor (RET) from the PDTB1xxxU series, housed in an SOT323 (SC-70) surface-mount package. It features built-in bias resistors with R1 at 10 kΩ and R2 at 10 kΩ. The device supports a collector-emitter voltage of -50 V and an output current of -500 mA. Key electrical characteristics include a DC current gain (hFE) of 70 at -50 mA and -5 V, a transition frequency of 140 MHz, and a maximum power dissipation of 300 mW. It is qualified to AEC-Q101 standards for automotive applications.

Feature Summary

• Integrated bias resistors simplify circuit design and reduce component count
• AEC-Q101 qualification ensures suitability for automotive environments
• High temperature capability up to 175 °C junction temperature

Applications

• Digital applications
• IC input control
• Switching loads

Procurement Notes

Verify the specific ordering suffix 'EU' corresponds to the SOT323/SC-70 package configuration as defined in the official Nexperia PDTB1XXXU datasheet. Confirm that the required resistor values match the PDTB114 variant specifications before finalizing procurement orders.

Selection Notes

Select this component when a compact PNP transistor solution with integrated base and emitter resistors is required. Ensure the 10 kΩ resistor ratio meets the specific drive requirements for the target digital logic or load switching application within the specified voltage and current limits.

Part Context

This part belongs to the PDTB1xxxU series of PNP Resistor-Equipped Transistors designed for space-constrained designs. It serves as a cost-saving alternative to discrete BC807 or BC817 series transistors in digital applications, offering a simplified footprint through the SOT323 package.

Replacement Considerations

The NPN complement for the PDTB114EU series is the PDTD114EU. When replacing discrete transistors, verify that the integrated resistor values align with the original circuit design requirements to maintain correct biasing.