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The PDTB114EUX is a PNP Resistor-Equipped Transistor (RET) from the Nexperia PDTB1xxxU series, housed in an SOT323 (SC-70) surface-mount package. It features built-in bias resistors with a nominal value of 10 kΩ for both R1 and R2, maintaining a ±10% ratio tolerance. The device supports a collector-emitter voltage of -50 V and an output current capability of -500 mA. Key electrical characteristics include a DC current gain (hFE) of at least 70 at -50 mA and -5 V, a transition frequency of 140 MHz, and a maximum total power dissipation of 300 mW. Qualified under AEC-Q101, it operates within a junction temperature range up to 175 °C.
Verify the specific ordering suffix against official Nexperia documentation to confirm the exact package variant and manufacturing origin. Ensure compliance with AEC-Q101 requirements if deploying in automotive environments. Confirm thermal management strategies align with the specified power dissipation limits on standard FR4 PCB footprints.
Select this component when a compact PNP switching solution with integrated base biasing is required. The 10 kΩ resistor configuration suits interfaces requiring moderate drive currents. Verify that the -50 V collector-emitter rating meets the system's voltage headroom requirements and that the SOT323 footprint accommodates the available board space constraints.
This part belongs to the PDTB1xxxU series of PNP resistor-equipped transistors designed for high-density circuit designs. It serves as a direct functional replacement for discrete transistor-resistor networks, offering a standardized pinout compatible with common SC-70 footprints while providing consistent electrical performance across the family.
PDTB114EU is the equivalent part number within the same series utilizing the identical SOT323 package and electrical specifications.