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The PDTB123EK,115 is a PNP resistor-equipped transistor (RET) from the PDTB123E series, manufactured by NXP Semiconductors. It features built-in bias resistors with R1 and R2 both at 2.2 kΩ, providing a typical resistor ratio of 1.0. The device supports a maximum collector-emitter voltage (VCEO) of -50 V and an output current capability of -500 mA. Packaged in the SOT346 (SC-59A/TO-236) surface-mount format, it offers ±10% resistor ratio tolerance. Key electrical characteristics include a DC current gain (hFE) of 40 at IC = -50 mA and VCE = -5 V, and a collector-emitter saturation voltage of -0.3 V at IC = -50 mA.
Verify the specific ordering suffix against the manufacturer's latest documentation to ensure correct package type and marking code compliance. Confirm that the SOT346 package variant matches the intended PCB footprint requirements. Cross-reference the product status to confirm availability as a production part rather than a preliminary or draft specification.
Select this component when a compact PNP solution with integrated base and pull-down resistors is required. Ensure the -50 V voltage rating and -500 mA current capacity meet the load requirements. Verify that the SOT346 package dimensions fit the available board space and that the thermal resistance characteristics are sufficient for the expected power dissipation levels.
This part belongs to the PDTB123E family of PNP resistor-equipped transistors. It serves as the PNP complement to the NPN PDTA123EK. The series includes variants in different packages such as SOT54 and SOT23, but the EK suffix specifically denotes the SOT346 surface-mount package configuration.
PDTA123EK is the NPN complement within the same series. For direct replacement, verify pinout compatibility and ensure the substitute meets the -50 V and -500 mA specifications.