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The PDTB123EQAZ is a PNP Resistor-Equipped Transistor (RET) from Nexperia, housed in a leadless DFN1010D-3 (SOT1215) package. It features built-in bias resistors with typical values of R1 = 2.2 kΩ and R2 = 2.2 kΩ. The device supports a collector-emitter voltage (VCEO) of -50 V and an output current (IO) of -500 mA. Total power dissipation reaches 325 mW at 25°C on standard FR4 PCBs. Junction temperature maximum is 150°C. The component is AEC-Q101 qualified for automotive use.
Verify the specific ordering suffix against official Nexperia documentation to confirm packaging details and availability status. Ensure the procurement channel provides valid traceability for AEC-Q101 qualified components intended for automotive or high-reliability environments. Cross-reference the binary marking code with datasheet specifications during incoming inspection.
Select this PNP RET when designing circuits requiring integrated base biasing to minimize board space. The 2.2 kΩ resistor configuration suits general-purpose switching tasks. Consider the DFN1010D-3 package dimensions for tight footprint constraints. Verify thermal performance requirements against the specified junction-to-ambient resistance values for your specific PCB layout.
This component belongs to the PDTB113/123/143/114EQA series of PNP resistor-equipped transistors. It serves as the complement to the NPN PDTD123EQA device. The series utilizes the SOT1215 leadless package variant designed for high-density surface-mount assembly.
PDTB123EM and PDTB123ET are alternative packages within the same electrical family. Verify pinout compatibility and thermal characteristics before substitution. No direct cross-brand equivalents are confirmed in public documentation.