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Product Detailed Parameters
- Description：TRANS PREBIAS PNP 50V TO92-3
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Box (TB)
- Resistors Included：R1 and R2
- Transistor Type：PNP - Pre-Biased
- Current - Collector (Ic) (Max)：500 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：2.2 kOhms
- Resistor - Emitter Base (R2)：2.2 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：40 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：500 mW
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package：TO-92-3
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Overview
The PDTB123ES,126 is a PNP Resistor-Equipped Transistor (RET) from the PDTB123E series, manufactured by NXP Semiconductors. It features an integrated bias resistor network with R1 = 2.2 kΩ and R2 = 2.2 kΩ, yielding a typical resistor ratio of 1.0. The device supports a maximum collector-emitter voltage (VCEO) of -50 V and a DC output current (IO) of -500 mA. Packaged in the SOT54 (SC-43A/TO-92) plastic single-ended leaded format, it offers a total power dissipation of 500 mW at 25 °C ambient temperature. The component includes built-in bias resistors to simplify circuit design and reduce component count.
Feature Summary
- Built-in bias resistors simplify circuit design and reduce component count
- Supports 500 mA output current capability for switching loads
- Provides ±10% resistor ratio tolerance for consistent performance
Applications
- Digital applications in automotive and industrial segments
- Cost-saving alternative for BC807 series in digital applications
- Controlling IC inputs
- Switching loads
Procurement Notes
Verify the specific ordering suffix against the manufacturer's latest documentation to confirm package type and packing method. The PDTB123ES designation corresponds to the SOT54 through-hole package. Confirm availability of the tape ammopack variant if required, as packing methods vary by suffix. Ensure compliance with absolute maximum ratings during integration.
Selection Notes
Select this component when a PNP transistor with integrated base biasing is required for digital switching or load control. The SOT54 package is suitable for through-hole mounting. Compare electrical characteristics such as VCEsat and hFE against application requirements. Consider the PDTB123EK or PDTB123ET for surface-mount alternatives within the same series.
Part Context
The PDTB123ES belongs to the PDTB123E series of 500 mA PNP Resistor-Equipped Transistors. This family includes variants like the PDTB123EK (SOT346) and PDTB123ET (SOT23). The series is designed to replace discrete resistor networks, offering a compact solution for digital logic interfaces and signal conditioning in embedded systems.
Replacement Considerations
Direct substitutes include other PDTB123E series members with different packages: PDTB123EK (SOT346) and PDTB123ET (SOT23). For surface-mount replacements, verify pinout compatibility. Cross-reference with BC807 series transistors if discrete biasing components are acceptable.
