PDTB123ET,215

Overview

The PDTB123ET,215 is a PNP Resistor-Equipped Transistor (RET) manufactured by Nexperia USA Inc. It integrates bias resistors within a compact SOT23 surface-mounted package to simplify circuit design and reduce component count. The device features a typical input resistor R1 of 2.2 kΩ with a ±10% tolerance ratio relative to the internal R2 resistor. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of -50 V, an output current capability of -500 mA, and a total power dissipation of 250 mW at ambient temperatures up to 25 °C. The unit operates within a junction temperature range of -65 °C to 150 °C and meets AEC-Q101 automotive qualification standards.

Feature Summary

• Integrates built-in bias resistors to simplify circuit design and reduce overall component count.
• AEC-Q101 qualified for reliability in automotive applications.
• Designed to reduce pick and place costs through integrated functionality.

Applications

• Digital applications in automotive and industrial segments
• Cost-saving alternative for BC807 series in digital applications
• Control of IC inputs
• Switching loads

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging configuration. Confirm that the requested part number matches the exact pinout and marking code requirements for the target PCB footprint. Cross-reference the revision history to ensure the latest product data sheet version is utilized during the design phase.

Selection Notes

Select this component when a PNP transistor with integrated base biasing is required for space-constrained designs. Ensure the application voltage does not exceed the -50 V collector-emitter rating. Verify that the thermal resistance characteristics are sufficient for the intended operating environment, particularly regarding the 250 mW power dissipation limit under specified ambient conditions.

Part Context

This component belongs to the PDTB series of PNP resistor-equipped transistors from Nexperia. It serves as the PNP complement to the NPN PDTD123ET model. The series is designed to replace discrete resistor-transistor combinations, offering a standardized solution for switching and amplification tasks in modern electronic circuits.

Replacement Considerations

PDTB123E_SER_2

FAQ

What is the function of the internal resistors in the PDTB123ET?

The device includes built-in bias resistors (R1 and R2) to simplify circuit design. R1 acts as the input resistor with a typical value of 2.2 kΩ, while R2 provides the necessary biasing ratio.

Is the PDTB123ET suitable for automotive applications?

Yes, the product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101, making it suitable for use in automotive applications.

What is the maximum collector-emitter voltage for this device?

The maximum collector-emitter voltage (VCEO) with an open base is -50 V.