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Product Detailed Parameters
- Description：TRANS PREBIAS PNP 50V 0.5A SMT3
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR)
- Resistors Included：R1 Only
- Transistor Type：PNP - Pre-Biased
- Current - Collector (Ic) (Max)：500 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：2.2 kOhms
- Resistor - Emitter Base (R2)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：250 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SMT3; MPAK
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Overview
The PDTB123TK is a PNP Resistor-Equipped Transistor (RET) from the NXP PDTB123T series, housed in an SOT346 (SC-59A) surface-mount package. It integrates a single bias resistor with a value of 2.2 kΩ, while the second resistor position remains open. The device supports a maximum collector-emitter voltage of -50 V and provides a continuous DC output current capability of -500 mA. Key electrical characteristics include a typical DC current gain (hFE) of 250 at -50 mA and a maximum collector-emitter saturation voltage of -0.3 V under specified test conditions.
Feature Summary
- Integrates built-in bias resistors to reduce component count and simplify circuit design.
- Provides 500 mA output current capability for robust switching applications.
- Offers a cost-saving alternative to discrete transistor configurations in digital logic circuits.
Applications
- Controlling IC inputs
- Switching loads
- Digital applications in automotive segments
- Digital applications in industrial segments
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm the exact packing method and reel specifications. Confirm that the SOT346 package variant matches the required footprint dimensions and pin alignment for the target PCB layout before finalizing procurement orders.
Selection Notes
Select this component when a PNP switching solution with integrated base biasing is required. Ensure the application voltage does not exceed the -50 V collector-emitter rating and that the load current remains within the -500 mA limit. Verify thermal dissipation requirements against the junction-to-ambient resistance values provided in the datasheet.
Part Context
This part belongs to the PDTB123T family of PNP resistor-equipped transistors. It serves as the PNP counterpart to the NPN PDTD123TK model. The series is designed to replace standard BC807 series transistors in digital applications by providing pre-biased functionality in a compact surface-mount form factor.
Replacement Considerations
The NXP PDTD123TK is the documented NPN complement within the same product family. Other variants in the series include PDTB123TS and PDTB123TT, which utilize different package types such as SOT54 and SOT23 respectively.
FAQ
What is the configuration of the internal resistors in the PDTB123TK?
The PDTB123TK features one built-in bias resistor (R1) with a nominal value of 2.2 kΩ connected to the input. The second resistor position (R2) is left open.
What is the marking code for the PDTB123TK?
The marking code printed on the PDTB123TK device is 'F1'.
How are the pins arranged for the SOT346 package?
For the SOT346 package, Pin 1 is the input (base), Pin 2 is GND (emitter), and Pin 3 is the output (collector).
