PDTB123TT,215

Overview

The PDTB123TT,215 is a PNP Resistor-Equipped Transistor (RET) manufactured by Nexperia. It integrates a single bias resistor within a small SOT23 (TO-236AB) surface-mounted device plastic package. The component provides a collector-emitter voltage rating of -50 V and an output current capability of -500 mA. The typical input bias resistor value is 2.2 kΩ with a tolerance range of 1.54 kΩ to 2.86 kΩ. The secondary resistor is open. Total power dissipation is rated at 250 mW at 25 °C ambient temperature, with a maximum junction temperature of 150 °C.

Feature Summary

• Built-in bias resistor simplifies circuit design and reduces component count
• AEC-Q101 qualified for automotive applications
• Cost-saving alternative for BC807 series in digital applications

Applications

• Digital application in automotive and industrial segments
• Control of IC inputs
• Switching loads

Procurement Notes

Verify the ordering suffix matches the required packing method. The suffix 215 indicates a packing quantity of 3000 units on a 4 mm pitch tape and reel. Confirm the marking code corresponds to the manufacturing origin before procurement.

Selection Notes

Select this component when a PNP transistor with integrated base biasing is required for space-constrained designs. Ensure the -50 V collector-emitter voltage and -500 mA continuous current ratings meet the load requirements. Verify compatibility with the SOT23 footprint during PCB layout.

Part Context

This part belongs to the PDTB123TT series of PNP resistor-equipped transistors. It serves as the PNP complement to the NPN PDTD123TT. The product line was originally from NXP Semiconductors before the business transitioned to Nexperia in February 2017.

Replacement Considerations

PDTD123TT is the NPN complement. PDTB123TK and PDTB123TS were deleted from the series.