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The PDTB123YK,115 is a PNP Resistor-Equipped Transistor (RET) from the PDTB123Y series. It features an integrated bias resistor network with R1 = 2.2 kΩ and R2 = 10 kΩ, providing a nominal ratio of 4.55. The device supports a maximum collector-emitter voltage (VCEO) of -50 V and a continuous output current (IO) of -500 mA. Packaged in the SOT346 (SC-59A/TO-236) surface-mount format, it offers a thermal resistance from junction to ambient of 500 K/W. Key electrical characteristics include a minimum DC current gain (hFE) of 70 at IC = -50 mA and a typical collector capacitance of 1 pF.
Verify the specific ordering suffix matches the required packing method. The '115' suffix indicates the SOT346 package supplied in tape and reel format. Confirm that the manufacturer designation aligns with NXP Semiconductors specifications. Ensure the component status is confirmed as production before finalizing procurement plans.
Select this component when a compact PNP transistor solution with integrated base biasing is required. The SOT346 package is suitable for surface-mount assembly. Consider the -50 V voltage rating and -500 mA current limit against load requirements. Verify compatibility with the target application's operating temperature range, which extends up to +150 °C.
This part belongs to the PDTB123Y series of PNP Resistor-Equipped Transistors. It serves as the PNP complement to the NPN PDTD123YK device. The series is designed to replace discrete resistor networks in digital logic circuits, offering a space-efficient alternative to standard small-signal transistors requiring external biasing components.
PDTB123YK is the direct equivalent within the same series. For pin-compatible replacements, verify the package type SOT346. Check if the replacement maintains the same resistor values (R1=2.2kΩ, R2=10kΩ) and polarity (PNP).