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The PDTB123YQAZ is a PNP Resistor-Equipped Transistor (RET) from the PDTB113Z/123Y/143XQA series, housed in a leadless DFN1010D-3 (SOT1215) package. It features a collector-emitter voltage (VCEO) of -50 V and an output current (IO) of -500 mA. The device includes built-in bias resistors with R1 at 2.2 kΩ and R2 at 10 kΩ, yielding a typical resistor ratio of 4.55. Minimum DC current gain (hFE) is 70 at IC = -50 mA and VCE = -5 V. Total power dissipation is 25 mW at Tamb ≤ 25°C on a standard FR4 PCB. Junction temperature ranges up to 150°C.
Verify the specific ordering suffix against the manufacturer's latest documentation to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status and AEC-Q101 qualification requirements match the target application environment before finalizing procurement orders.
Select this component when a compact PNP switching solution with integrated base drive is required. Ensure the 2.2 kΩ input resistance aligns with the driving source impedance. Verify thermal management capabilities based on the specific PCB copper area and layer configuration used in the design.
This part belongs to the PDTB113Z/123Y/143XQA series of 50 V, 500 mA PNP resistor-equipped transistors. It serves as a cost-saving alternative to discrete transistor and resistor combinations, specifically targeting digital logic interfaces and load switching in space-constrained designs.
The NPN complement within the same series is PDTD123YQA. Cross-reference pinouts and polarity differences carefully when substituting into existing circuits designed for NPN configurations.