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Product Detailed Parameters
- Description：TRANS PREBIAS PNP 50V TO236AB
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Bulk,Bulk
- Resistors Included：R1 and R2
- Transistor Type：PNP - Pre-Biased
- Current - Collector (Ic) (Max)：500 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：2.2 kOhms
- Resistor - Emitter Base (R2)：10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：70 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- Frequency - Transition：-
- Power - Max：250 mW
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：TO-236AB
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Overview
The PDTB123YT/APGR is a PNP Resistor-Equipped Transistor (RET) manufactured by Nexperia USA Inc. in a SOT23 surface-mount package. It integrates bias resistors R1 and R2 with a typical values of 2.2 kΩ and 10 kΩ respectively, maintaining a ratio tolerance of ±10%. The device supports a maximum collector-emitter voltage of -50 V and an output current of -500 mA. Key electrical characteristics include a DC current gain (hFE) minimum of 70 at -50 mA and -5 V, and a total power dissipation of 250 mW. The component operates within an ambient temperature range of -65 °C to 150 °C.
Feature Summary
- Integrates built-in bias resistors to simplify circuit design and reduce component count.
- Offers ±10% resistor ratio tolerance for consistent performance.
- Reduces pick and place costs through compact SOT23 packaging.
Applications
- Digital applications in automotive and industrial segments
- Cost-saving alternative for BC807 series in digital applications
- Control of IC inputs
- Switching loads
Procurement Notes
Verify the specific suffix /APGR against official Nexperia documentation to confirm manufacturing site or tape-and-reel specifications. Ensure the procurement channel provides valid traceability for this non-automotive qualified product. Confirm that the ordering information matches the required package version and marking codes before finalizing orders.
Selection Notes
Select the PDTB123YT/APGR when a PNP transistor with integrated biasing is required for space-constrained designs. Verify that the 50 V collector-emitter voltage and 500 mA current ratings meet the application requirements. Consider the thermal resistance of 500 K/W in free air for heat dissipation planning. Ensure compatibility with standard SOT23 footprints during PCB layout.
Part Context
This component belongs to the PNP Resistor-Equipped Transistor family from Nexperia. It serves as a discrete solution replacing multiple components, offering a simplified alternative to general-purpose transistors requiring external bias networks. The SOT23 package allows for high-density mounting on printed-circuit boards, supporting automated assembly processes.
Replacement Considerations
The datasheet identifies the NPN complement as PDTD123YT. For direct functional replacement in complementary circuits, verify pinout compatibility and ensure the NPN variant meets the voltage and current requirements of the original design.
FAQ
What are the typical values for the internal bias resistors?
The typical value for bias resistor R1 is 2.2 kΩ, and the typical value for bias resistor R2 is 10 kΩ.
Is this component automotive qualified?
No, the PDTB123YT is explicitly stated as a non-automotive qualified product in the revision history.
What is the maximum junction temperature?
The maximum junction temperature (Tj) is 150 °C.
