PDTB123YT-QR

Overview

The PDTB123YT-QR is a PNP Resistor-Equipped Transistor (RET) manufactured by Nexperia, housed in an SOT-23 surface-mount package. It integrates bias resistors to simplify circuit design and reduce component count. Key electrical parameters include a collector-emitter voltage (VCEO) of -50 V, a continuous output current (IO) of -500 mA, and a total power dissipation (Ptot) of 250 mW at 25 °C ambient temperature. The input bias resistor (R1) has a typical value of 2.2 kΩ with a tolerance range of 1.54 kΩ to 2.86 kΩ. The built-in resistor ratio (R2/R1) typically measures 4.55, ranging from 4.1 to 5. The device features a minimum DC current gain (hFE) of 70 at IC = -50 mA and VCE = -5 V. It operates within an ambient temperature range of -65 °C to +150 °C and is qualified according to AEC-Q101 standards.

Feature Summary

• Integrated bias resistors with ±10% tolerance for simplified circuit design
• AEC-Q101 qualification suitable for automotive applications
• High output current capability of 500 mA
• Reduces pick and place costs through component consolidation

Applications

• Digital applications in automotive and industrial segments
• Control of IC inputs
• Switching loads
• Cost-saving alternative for BC807 series in digital applications

Procurement Notes

Verify the specific ordering suffix against the manufacturer's latest documentation to confirm packaging details and availability status. Ensure that the selected variant matches the required automotive qualification level if intended for such environments. Cross-reference the part number with official Nexperia databases to validate compliance with current RoHS and REACH directives before finalizing procurement orders.

Selection Notes

Select this component when a PNP transistor with integrated base biasing is required for space-constrained designs. The SOT-23 package offers a compact footprint suitable for high-density PCB layouts. Consider the 500 mA current rating and 50 V voltage breakdown limits to ensure adequate headroom for the target application. Verify thermal management requirements based on the specified power dissipation and ambient operating conditions.

Part Context

This device belongs to the PDTB series of PNP resistor-equipped transistors from Nexperia. It serves as the PNP counterpart to the NPN PDTD123YT-Q model. The series is designed to replace discrete resistor-transistor networks, offering a standardized solution for switching and amplification tasks in modern electronic systems requiring reduced bill-of-materials complexity.

Replacement Considerations

The NPN complement is identified as PDTD123YT-Q. For direct functional substitution in complementary circuits, verify pinout compatibility and electrical parameter alignment with the original design specifications.