PDTB123YT,215

Overview

The PDTB123YT is a PNP Resistor-Equipped Transistor (RET) manufactured by Nexperia, housed in a small SOT23 (TO-236AB) Surface-Mounted Device plastic package. It integrates bias resistors to simplify circuit design and reduce component count. The device features a collector-emitter voltage of -50 V and an output current capability of -500 mA. Typical internal resistor values include R1 at 2.2 kΩ and a bias resistor ratio (R2/R1) of 4.55. The DC current gain (hFE) is specified with a minimum of 70 at -50 mA and -5 V. Total power dissipation reaches 250 mW, with an operating temperature range from -65 °C to 150 °C.

Feature Summary

• Integrates built-in bias resistors to simplify circuit design and reduce overall component count.
• Provides ±10% resistor ratio tolerance for consistent performance across applications.
• Supports high output current capability suitable for switching loads and digital applications.

Applications

• Digital applications in automotive and industrial segments
• Cost-saving alternative for BC807 series in digital applications
• Control of IC inputs
• Switching loads

Procurement Notes

Verify the specific ordering suffix matches the required packaging format, as standard retail listings may vary from bulk tape-and-reel configurations. Confirm that the non-automotive qualified status aligns with your project requirements, as automotive-grade alternatives carry distinct suffixes. Ensure compatibility with standard SOT23 footprints during PCB layout verification.

Selection Notes

Select this component when a compact PNP solution with integrated biasing is required for general-purpose switching or amplification. Compare against the NPN complement PDTD123YT if complementary pairs are needed. Verify that the 50 V rating and 500 mA current limit meet the specific load requirements of the target application before finalizing the design.

Part Context

This part belongs to the PDTB series of PNP resistor-equipped transistors from Nexperia. It serves as the PNP counterpart to the NPN PDTD123YT. The series is designed to replace discrete transistor and resistor combinations, offering a space-efficient solution for modern surface-mount assembly processes while maintaining reliable electrical characteristics.

Replacement Considerations

Direct functional substitutes within the same package and specifications include the PDTD123YT for NPN applications. For automotive-grade requirements, consider the PDTB123YT-Q variant. Always verify pinout compatibility and thermal resistance characteristics when substituting with other RET devices.

FAQ

What are the typical values for the internal bias resistors?

The typical value for bias resistor R1 is 2.2 kΩ, and the bias resistor ratio (R2/R1) is typically 4.55.

Is this component automotive qualified?

No, the PDTB123YT is not automotive qualified. Automotive versions are available with the -Q suffix, such as the PDTB123YT-Q.

What is the maximum total power dissipation?

The maximum total power dissipation is 250 mW when the ambient temperature is 25 °C or lower.