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Product Detailed Parameters
- Description：PDTB123YU-Q/SOT323/SC-70
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR)
- Resistors Included：-
- Transistor Type：-
- Current - Collector (Ic) (Max)：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Resistor - Base (R1)：-
- Resistor - Emitter Base (R2)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Vce Saturation (Max) @ Ib, Ic：-
- Current - Collector Cutoff (Max)：-
- Frequency - Transition：-
- Power - Max：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
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Overview
The PDTB123YU-QF is a single pre-biased PNP bipolar junction transistor (BJT) manufactured by Nexperia. It integrates internal biasing resistors to simplify circuit design and reduce component count. The device features a maximum collector-emitter voltage of 50 V and a continuous collector current rating of 500 mA. Internal resistance values are specified as 2.2 kΩ for the base resistor and 10 kΩ for the emitter resistor. The unit operates within a temperature range of -65°C to +150°C, with a total power dissipation capacity of 300 mW. It utilizes an SOT-323 surface-mount package.
Feature Summary
- Integrates dual biasing resistors to minimize external components and PCB footprint
- High current capability suitable for switching applications up to 500 mA
- Automotive-grade qualification compliant with AEC-Q101 standards
- Optimized for high-speed switching with a transition frequency of 140 MHz
Applications
- Automotive load switching and control circuits
- General-purpose digital logic level translation
- Power management interface drivers
- Battery protection and monitoring systems
Procurement Notes
Verify the specific suffix 'QF' against official Nexperia documentation to confirm automotive grade compliance and RoHS status. Ensure the ordering part number matches the required tape and reel configuration. Cross-reference the datasheet revision date to validate thermal characteristics and absolute maximum ratings before finalizing procurement specifications.
Selection Notes
Select this component when a PNP pre-biased transistor is required for automotive or industrial environments demanding AEC-Q101 reliability. The integrated 2.2 kΩ base resistor provides adequate drive current for standard logic outputs. Consider the 500 mA current limit and 300 mW power dissipation in the SOT-323 package for thermal management planning in dense layouts.
Part Context
This device belongs to Nexperia's portfolio of resistor-equipped transistors designed to replace discrete BJT and resistor networks. The 'Q' suffix indicates automotive qualification, ensuring robustness under harsh operating conditions. It serves as a compact alternative to traditional discrete configurations, offering improved consistency and reduced assembly time in mass production scenarios.
Replacement Considerations
Direct substitutes include other AEC-Q101 qualified PNP pre-biased transistors in SOT-323 packages from Nexperia, such as the PDTB123YUX series. Verify that replacement parts maintain identical internal resistance values (2.2 kΩ/10 kΩ) and pinout compatibility to ensure seamless integration without schematic modifications.
FAQ
What is the internal resistor configuration?
The device contains a 2.2 kΩ base resistor and a 10 kΩ emitter resistor integrated into the silicon die.
Is this component qualified for automotive use?
Yes, the PDTB123YU-QF is qualified according to the AEC-Q101 standard for automotive applications.
