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The PDTB143EQAZ is a PNP Resistor-Equipped Transistor (RET) from Nexperia, housed in a leadless DFN1010D-3 (SOT1215) package. It features built-in bias resistors R1 and R2, both valued at 4.7 kΩ with ±10% tolerance. The device supports a collector-emitter voltage of -50 V and an output current of -500 mA. Key electrical characteristics include a DC current gain (hFE) of 60 at -50 mA and -5 V, a saturation voltage of -100 mV at -50 mA, and a transition frequency of 150 MHz. Total power dissipation reaches 325 mW at 25°C.
Verify the specific ordering suffix against the manufacturer's latest documentation to ensure correct packaging and marking codes. Confirm that the DFN1010D-3 footprint matches the PCB layout requirements. Check for RoHS3 compliance status and moisture sensitivity level before finalizing procurement orders.
Select this component when a compact PNP switching solution with integrated base biasing is required. Ensure the 4.7 kΩ resistor values align with the target drive currents. Verify that the -500 mA current rating meets the load requirements and that the thermal resistance characteristics are sufficient for the intended operating environment.
This part belongs to the PDTB113/123/143/114EQA series, which shares identical physical dimensions and general performance profiles. Variations within the series are defined by different internal resistor values, such as 1 kΩ or 10 kΩ, while maintaining the same 50 V and 500 mA ratings.
Direct substitutes within the same family include PDTB113EQAZ, PDTB123EQAZ, and PDTB114EQAZ. These parts share the same package and electrical limits but differ in internal resistor values.