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The PDTB143ETR is a PNP Resistor-Equipped Transistor (RET) from the PDTB1xxxT series, housed in a TO-236AB (SOT23) surface-mounted package. It features built-in bias resistors R1 and R2 with typical values of 4.7 kΩ each. The device supports a collector-emitter voltage (VCEO) of -50 V and an output current (IO) of -500 mA. Key electrical characteristics include a DC current gain (hFE) minimum of 60 at IC = -50 mA and VCE = -5 V, a transition frequency (fT) of 140 MHz, and a total power dissipation of 320 mW at 25 °C. The component is AEC-Q101 qualified for automotive applications.
Verify the specific ordering suffix against the manufacturer's latest documentation to ensure correct packaging configuration. Confirm that the requested part matches the PDTB143ET base type within the PDTB1xxxT series. Cross-reference the marking code *4X with the official datasheet to validate authenticity. Ensure compliance with RoHS3 standards if required by the application specifications.
Select this component when a PNP transistor with integrated biasing is required for space-constrained designs. The SOT23 package allows for direct replacement of discrete transistor-resistor networks. Consider the 4.7 kΩ internal resistor values for appropriate base drive currents. Verify thermal management requirements given the 320 mW power dissipation limit in free air.
The PDTB143ETR belongs to the PDTB1xxxT family of PNP resistor-equipped transistors manufactured by Nexperia. This series includes variants like PDTB114ET and PDTB143XT, distinguished primarily by their internal resistor configurations. All members share the same TO-236AB package and general electrical ratings, offering a standardized solution for digital switching and amplification tasks.
Publicly confirmed substitutes include the PDTB143ET and PDTB143XT from the same Nexperia series. These parts share identical pinouts and mechanical dimensions. Verify functional equivalence regarding the specific resistor values and hFE ranges before substitution.